|일 시||2023년 7월 5일(수) 14:00~15:30|
|장 소||KINTEX 제1전시장 3층 그랜드볼룸|
|발표제목||Nano Materials for Ultimate Li ion battery and beyond|
|발표내용||Lithium-ion batteries (LIBs), the optimal energy storage device have been constantly innovating through
electrochemistry and nano materials to meet the needs of rapid growth of electric vehicle industries and
fullfil the strengthend functions of mobile devices.
Now for the challenge towards the ultimate LIB, based on proven principles, implementation of a new material design that can reach the practical limit is required. And for the beyond LIB, innovation of ion storage mechanism is required.
This presentation introduces the concepts of advanced technologies for ultimate LIB. Among them are nano materials such as Si-carbon nanocomposite, functional graphene, multi & single wall nanotube to enhance the performance of active materials are included. In this presentation novel technologies for beyond LIB technologies will be also introduced. Among these, nano-scaled Li metal electroplating guide layers and high conductive sulfide electrolytes for innovative solid state batteries are included.
Along with these, technology roadmap will be proposed for material scientist and engineers to target, which promotes the innovation and sustainable growth of Li ion battery technologies and industries.
|소속||University of California Santa Barbara, USA|
|연사||Prof. Shuji Nakamura
*Nobel Prize in Physics 2014
|발표제목||III-Nitride based LEDs and Laser Diodes|
|발표내용||High brightness III-nitride based blue/green LEDs and laser diodes (LDs) are commercially available nowadays. However, UV LEDs and LD have a lot of problems for the commercialization. We have studied UV-A~C LEDs by changing the V/III ratio and a pausing time of multi-quantum well (MQW) and supper lattices (SLs) using a low pressure MOCVD. The surface morphology of the active layer showed the rough surface with nano disk structures with low V/III ratio of 10. With the surface morphology of nano disk structures of the MQW active layer, the EQE of UV-C LED was as high as 10%. For p-type layers, the short period SLs with a polarization doping were used. For UV LDs, we are developing a new structure using the strain relaxed layer.|